来源:A Difference-Microvariation Solution and Analytical Model for Generic HEMTs(TED 22年) 摘要 这篇论文提出了一种AlGaN/GaN和AlGaAs/GaAs基高电子迁移率晶体管(HEMT)的分析型直流模型。该模型考虑了高栅偏压下势垒层中积累的电荷。为了突破准确高效求解模型的瓶颈问题,作者开发了一种改进的差分微
Sub 导入全站仪数据() Dim Filename As Variant, myText, S, mArr() As String, narr() As String Dim i, y As Long, j As Long Filename = ThisWorkbook.Path & "\1112X.GT7" '指定文件字符串 j = 1 Wit