eFLASH详解(摘自台积电)

• eFlash闪存是嵌入式系统中常用的非易失存储器，支持代码片上执行。eFlash在写入之前必须先执行擦除动作，擦除以块为单位。eFlash的写入也叫编程，需要通过特殊的命令来实现。

代码片上执行https://britripe.blog.csdn.net/article/details/123060551

• Non-Volatile Memory (NVM) includes the industry common One-Time-Programmable memory (OTP), Multiple-Time-Programmable memory (MTP), Flash memory (Flash), and next generation NVM of Magnetic RAM (MRAM) and Resistive RAM (RRAM).

• [[非易失性存储器 (NVM) 包括业界常见的一次性可编程存储器 (OTP)、多次可编程存储器 (MTP)、闪存 (Flash) 以及磁性 RAM (MRAM) 和电阻式 RAM 的下一代 NVM]]

  TSMC provides foundry's most advanced and comprehensive portfolio of Embedded NVM technologies, featuring fastest computing capacity, smallest flash dimensions, and lowest power consumption.

• [台积电提供代工厂最先进、最全面的嵌入式 NVM 技术组合，具有最快的计算能力、最小的闪存尺寸和最低的功耗。 ]

• TSMC's Embedded Flash technology ranges from 0.5-micron (µm) to 40nm and provides a number of flash IP options to meet a variety of product design requirements. TSMC's 2018 total shipment of Embedded Flash wafers to customers ranked No.1 in the global semiconductor industry, supporting a wide range of applications including consumer electronics, portable electronics, home appliances, smartcards, computers, wired and wireless communications, automotive electronics, medical equipment, industrial automation, the Internet of Things, and wearables.
• [台积电的嵌入式闪存技术范围从 0.5 微米 (µm) 到 40 纳米，并提供多种闪存 IP 选项以满足各种产品设计要求。 台积电 2018 年嵌入式 Flash 晶圆客户出货量全球半导体行业第一，支持消费电子、便携式电子、家用电器、智能卡、计算机、有线和无线通信、汽车电子、医疗设备等广泛应用 、工业自动化、物联网和可穿戴设备。 ]

• Meanwhile, TSMC started volume production of 40nm Embedded Flash technology for automotive in 2018, and is now developing the 28nm Embedded Flash. This technical qualification is expected in 2019 for automobile electronics and micro controller units (MCU). At the mean time, TSMC is also developing Embedded MRAM, and Embedded RRAM in parallel to fulfill customers' need of continuous performance improvement and power-consumption reduction. 40nm ULP embedded resistive random access memory (RRAM) technology, which began risk production at the end of 2017, completed consumer grade qualification test for 10,000 cycles of endurance in 2018. This technology is fully CMOS (Complementary Metal Oxide Semiconductor) logic compatible for PDK and IP re-use for applications including wireless MCU, IoT and wearable devices. 22nm ULL magnetic random access memory (MRAM) technology progressed well, demonstrated reflow capability and passed JEDEC 168 hours high-temperature operating life (HTOL) reliability validation at the end of 2018. Through IP customization, MRAMs can serve various applications, such as artificial intelligence and eFlash replacement for MCU.

• [同时，台积电于 2018 年开始量产 40 纳米嵌入式闪存技术用于汽车，目前正在开发 28 纳米嵌入式闪存。该技术资格预计将于 2019 年用于汽车电子和微控制器单元 (MCU)。同时，台积电也在研发Embedded MRAM和Embedded RRAM并行开发，以满足客户不断提升性能和降低功耗的需求。 2017年底开始风险生产的40nm ULP嵌入式电阻随机存取存储器（RRAM）技术，于2018年完成了10,000次寿命的消费级鉴定测试。该技术完全兼容PDK的CMOS（互补金属氧化物半导体）逻辑和 IP 重用应用，包括无线 MCU、物联网和可穿戴设备。 22nm ULL 磁性随机存取存储器 (MRAM) 技术进展顺利，表现出回流能力，并于 2018 年底通过了 JEDEC 168 小时高温工作寿命 (HTOL) 可靠性验证。通过 IP 定制，MRAM 可以服务于各种应用，例如人工MCU的智能和eFlash替代品。]