题目:High Performance 3.3KV 4H-SiC MOSFET with a Floating Island and Hetero Junction Diode 阅读日期:2023.6.24 受到的启发: The gate-drain charge can be obtained through a plateau region of the gate charge. A
题目:3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss 阅读日期:2023.6.23 受到的启发: The Ron-sp of the SH-HJD MOSFET is 9.60 mΩ∙cm2, which is about 21.6% lower than the 12