标题：Simultaneously Achieving Large Gate Swing and Enhanced Threshold Voltage Stability in Metal/Insulator/p-GaN Gate HEMT (IEDM2023) 摘要 摘要：对于增强型GaN功率晶体管的发展，栅压摆幅和阈值电压稳定性通常是互相排斥的。本文展示了一种具有内置p-GaN电位稳定器(