S3C2440裸机------NandFlash编程_擦除与烧写

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目录

1.擦除

2.烧写

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1.擦除

NandFlash是以块为单位进行擦除的，一个块是128K，从上面的时序图我们可以看到，首先我们要发出60命令，然后发出三个行地址，然后发送D0H，然后等待擦除结束。

int nand_erase(unsigned int addr, unsigned int len)
{int page = addr / 2048;if (addr & (0x1FFFF)){printf("nand_erase err, addr is not block align\n\r");return -1;}if (len & (0x1FFFF)){printf("nand_erase err, len is not block align\n\r");return -1;}nand_select(); while (1){page = addr / 2048;nand_cmd(0x60);/* row/page addr */nand_addr_byte(page & 0xff);nand_addr_byte((page>>8) & 0xff);nand_addr_byte((page>>16) & 0xff);nand_cmd(0xD0);wait_ready();len -= (128*1024);if (len == 0)break;addr += (128*1024);}nand_deselect(); 	return 0;
}

2.烧写

 从上面的时序图可以看到，要想烧写NandFlash，我们首先发出80命令，然后发出五个地址，然后开始写数据，数据写完之后发出10命令，然后开始等待烧写完成。

void nand_write(unsigned int addr, unsigned char *buf, unsigned int len)
{int page = addr / 2048;int col  = addr & (2048 - 1);int i = 0;nand_select(); while (1){nand_cmd(0x80);/* 发出地址 *//* col addr */nand_addr_byte(col & 0xff);nand_addr_byte((col>>8) & 0xff);/* row/page addr */nand_addr_byte(page & 0xff);nand_addr_byte((page>>8) & 0xff);nand_addr_byte((page>>16) & 0xff);/* 发出数据 */for (; (col < 2048) && (i < len); ){nand_w_data(buf[i++]);}nand_cmd(0x10);wait_ready();if (i == len)break;else{/* 开始下一个循环page */col = 0;page++;}}nand_deselect(); 	
}

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