72.12专题

【ISSCC】论文详解-34.6 28nm 72.12TFLOPS/W混合存内计算架构

本文介绍ISSCC34.6文章,题目是《A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC》(一种28nm 72.12TFLOPS/W混合域外积浮点SRAM存内计算宏单元,具